? 2010 ixys corporation, all rights reserved ds99380f(01/10) IXFH170N10P ixfk170n10p polar tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier v dss = 100v i d25 = 170a r ds(on) 9m t rr 150ns features z international standard packages z fast intrinsic rectifier z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions maximum ratings v dss t j = 25c to 175c 100 v v dgr t j = 25c to 175c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 170 a i l(rms) external lead current limit 160 a i dm t c = 25c, pulse width limited by t jm 350 a i a t c = 25c 60 a e as t c = 25c 2 j dv/dt i s i dm , v dd v dss , t j 175c 10 v/ns p d t c = 25c 715 w t j -55 to +175 c t jm +175 c t stg -55 to +175 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 150c 500 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 9 m v gs = 15v, i d = 350a 7 m g = gate d = drain s = source tab = drain to-247 (ixfh) g s tab d to-264 (ixfk) s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFH170N10P ixfk170n10p ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 50 72 s c iss 6000 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 2340 pf c rss 730 pf t d(on) 35 ns t r 50 ns t d(off) 90 ns t f 33 ns q g(on) 198 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 39 nc q gd 107 nc r thjc 0.21 c/w r thcs (to-247) 0.21 c/w (to-264) 0.15 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 60a r g = 3.3 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 170 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 150 ns i rm 8.0 a q rm 0.6 c i f = 25a, -di/dt = 100a/ s, v r = 50v, v gs = 0v e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-264 aa ( ixfk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 back side 1 = gate 2 = drain 3 = source tab = drain
? 2010 ixys corporation, all rights reserved IXFH170N10P ixfk170n10p fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 6v 5v 7v 8v 9v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 9v 5v 8v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 180 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ds - volts i d - amperes v gs = 10v 6v 5v 8v 9v 7v fig. 4. r ds(on) normalized to i d = 85a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 170a i d = 85a fig. 5. r ds(on) normalized to i d = 85a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFH170N10P ixfk170n10p fig. 7. input admittance 0 40 80 120 160 200 240 280 320 345678910 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 20 40 60 80 100 120 0 40 80 120 160 200 240 280 320 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 50v i d = 85a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc
? 2010 ixys corporation, all rights reserved IXFH170N10P ixfk170n10p fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_170n10p(8s)01-07-10-c
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